دیتاشیت SIHD12N50E-GE3
مشخصات دیتاشیت
| نام دیتاشیت |
SIHD12N50E-GE3
|
| حجم فایل |
95.968
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
9
|
مشخصات
-
RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Vishay Intertech SIHD12N50E-GE3
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Operating Temperature:
-55°C~+150°C@(Ta)
-
Power Dissipation (Pd):
114W
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Total Gate Charge (Qg@Vgs):
50nC@10V
-
Drain Source Voltage (Vdss):
550V
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Input Capacitance (Ciss@Vds):
886pF@100V
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Continuous Drain Current (Id):
10.5A
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Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
380mΩ@10V,6A
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Package:
TO-252
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Manufacturer:
Vishay Intertech
